BD434-25 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD434-25
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 36 W
Tensión colector-base (Vcb): 22 V
Tensión colector-emisor (Vce): 22 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar BD434-25
Principales características: BD434-25
bd433 bd435 bd437 bd434 bd436 bd438.pdf
BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in 1 2 car-radio output
bd433 bd434 bd435 bd436 bd437 bd438.pdf
BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car
bd434 bd436 bd438.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
bd434 bd436 bd438.pdf
BD434/436/438 Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD434 - 22 V BD436 - 32 V BD438 - 45 V VCES Collector-Emitter Voltage
Otros transistores... BD433-16 , BD433-25 , BD433A , BD433B , BD433C , BD434 , BD434-10 , BD434-16 , 2SC2383 , BD434A , BD434B , BD434C , BD435 , BD435-10 , BD435-16 , BD435-25 , BD435A .
History: BD433-25
History: BD433-25
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