BD435-25 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD435-25  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 36 W

Tensión colector-base (Vcb): 32 V

Tensión colector-emisor (Vce): 32 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: TO126

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BD435-25 datasheet

 9.1. Size:73K  st
 bd433 bd435 bd437 bd434 bd436 bd438.pdf pdf_icon

BD435-25

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in 1 2 car-radio output

 9.2. Size:51K  st
 bd433 bd434 bd435 bd436 bd437 bd438.pdf pdf_icon

BD435-25

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car

 9.3. Size:44K  fairchild semi
 bd433 bd435 bd437.pdf pdf_icon

BD435-25

BD433/435/437 Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD433 22 V BD435 32 V BD437 45 V VCES Collector-Emitter Voltage BD433

 9.4. Size:57K  samsung
 bd433 bd435 bd437.pdf pdf_icon

BD435-25

BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING TO-126 APPLICATIONS Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD433 VCBO 22 V BD435 32 V BD437 45 V Collector Emitter Voltage BD433 VCES 22 V BD435 32 V 1. Emitter 2.Collector 3.Base BD437 45 V

MOSTRAR MÁS

Otros transistores... BD434-16, BD434-25, BD434A, BD434B, BD434C, BD435, BD435-10, BD435-16, S9018, BD435A, BD435B, BD435C, BD436, BD436-10, BD436-16, BD436-25, BD436A