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BD435A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD435A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 36 W
   Tensión colector-base (Vcb): 32 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar BD435A

 

BD435A Datasheet (PDF)

 9.1. Size:73K  st
bd433 bd435 bd437 bd434 bd436 bd438.pdf

BD435A
BD435A

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.The BD433 is especially suitable for use in12car-radio output

 9.2. Size:51K  st
bd433 bd434 bd435 bd436 bd437 bd438.pdf

BD435A
BD435A

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.12The BD433 is especially suitable for use in3car

 9.3. Size:44K  fairchild semi
bd433 bd435 bd437.pdf

BD435A
BD435A

BD433/435/437Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD433 22 V: BD435 32 V: BD437 45 V VCES Collector-Emitter Voltage: BD433

 9.4. Size:57K  samsung
bd433 bd435 bd437.pdf

BD435A
BD435A

BD433/435/437 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR AND SWITCHINGTO-126APPLICATIONS Complement to BD434, BD436 and BD438 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD433 VCBO 22 V: BD435 32 V: BD437 45 V Collector Emitter Voltage : BD433 VCES 22 V: BD435 32 V1. Emitter 2.Collector 3.Base: BD437 45 V

 9.5. Size:201K  onsemi
bd433s bd435s bd435stu bd437s.pdf

BD435A
BD435A

BD433S 1 1

 9.6. Size:76K  onsemi
bd435g bd437g bd439g bd441g.pdf

BD435A
BD435A

BD435G, BD437G, BD439G,BD441GPlastic Medium-PowerSilicon NPN TransistorsThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications.http://onsemi.comFeatures4.0 AMPERES Complementary Types are BD438 and BD442POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*NPN SILICONMAXIMUM RATINGSCOLLECTOR

 9.7. Size:59K  onsemi
bd435 bd437 bd439 bd441.pdf

BD435A
BD435A

BD435, BD437, BD439,BD441Plastic Medium PowerSilicon NPN TransistorThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications. Complementary typeshttp://onsemi.comare BD438 and BD442.4.0 AMPERESFeaturesPOWER TRANSISTORS Pb-Free Packages are Available*NPN SILICONMAXIMUM RATI

 9.8. Size:60K  onsemi
bd435g.pdf

BD435A
BD435A

BD435, BD437, BD439,BD441Plastic Medium PowerSilicon NPN TransistorThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications. Complementary typeshttp://onsemi.comare BD438 and BD442.4.0 AMPERESFeaturesPOWER TRANSISTORS Pb-Free Packages are Available*NPN SILICONMAXIMUM RATI

 9.9. Size:130K  cdil
bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf

BD435A
BD435A

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD433 BD434BD435 BD436BD437 BD438BD439 BD440BD441 BD442NPN PNPECTO126 BPlastic PackageIntended for use in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNITBD434 BD436

 9.10. Size:280K  jiangsu
bd433 bd435 bd437.pdf

BD435A
BD435A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD433 / BD435 / BD437 TRANSISTOR (NPN)TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD434, BD436 And BD438 2. COLLECTOR3. BASE Equivalent Circuit BD433 BD435 BD437 XX XX XXBD433,BD435,BD437=Device code Solid dot = Green molding

 9.11. Size:199K  lge
bd433 bd435 bd437.pdf

BD435A
BD435A

BD433/435/437(NPN)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Amplifier and switching applications 2.5007.4002.9001.1007.8001.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900Symbol Parameter Value Units3.0004.1003.200VCBO Collector-Base Voltage BD433 22 10.6000.000 BD435 32 V 11.0000.300 BD437 45

 9.12. Size:119K  shantou-huashan
hsbd435.pdf

BD435A

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD435 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.13. Size:144K  shantou-huashan
hbd435.pdf

BD435A
BD435A

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD435 APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector Dissipation

 9.14. Size:117K  inchange semiconductor
bd433 bd435 bd437.pdf

BD435A
BD435A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD433/435/437 DESCRIPTION With TO-126 package Complement to type BD434/436/438 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIO

 9.15. Size:187K  inchange semiconductor
bd435.pdf

BD435A
BD435A

isc Silicon NPN Power Transistor BD435DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = 32V(Min)CEO(SUS)Complement to type BD436Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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