BD533 Datasheet. Equivalente

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 bd533 bd534 bd535 bd536 bd537.pdf

BD533 BD535 BD537 BD534 BD536 Complementary power transistors . Features BD533, BD535, and BD537 are NPN transistors Description 3 The devices are manufactured in Planar 2 1 technology with Base Island layout. The resulting transistor shows exceptional high gain TO-220 performance coupled with very low saturation voltage. The PNP types are BD534 and BD536. Figure

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 bd533 bd534 bd535 bd536 bd537 bd538.pdf

BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are BD534, 1 BD536, and B

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 bd533 bd535 bd537.pdf

BD533/535/537 Medium Power Linear and Switching Applications Low Saturation Voltage Complement to BD534, BD536 and BD538 respectively TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD533 45 V BD535 60 V BD537 80 V VCES Collect

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 bd533 bd534 bd535 bd536 bd537 bd538.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD533, BD535, BD537 BD534, BD536, BD538 BD533, 535, 537 NPN PLASTIC POWER TRANSISTORS BD534, 536, 538 PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX.

 ..5. Size:120K  inchange semiconductor
 bd533 bd535 bd537.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD533/535/537 DESCRIPTION With TO-220C package Complement to type BD534/536/538 Low saturation voltage APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25

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 bd533.pdf

isc Silicon NPN Power Transistor BD533 DESCRIPTION DC Current Gain - h = 40@ I = 0.5A FE C Collector-Emitter Sustaining Voltage- V = 45V(Min) CEO(SUS) Complement to Type BD534 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =2

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 bd533fp bd534fp.pdf

BD533FP BD534FP COMPLEMENTARY SILICON POWER TRANSISTORS BD534FP IS SGS-THOMSON PREFERRED SALESTYPE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) DESCRIPTION The BD533FP is silicon epitaxial-base NPN power transistor in Jedec TO-220FP fully molded isolated package, intented for use in medium 3 2 power linear and switching applications. 1 The complementary P