BD538K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BD533/5/7BD534/6/8COMPLEMENTARY SILICON POWER TRANSISTORS BD534, BD535, BD536, BD537 AND BD538ARE SGS-THOMSON PREFERREDSALESTYPESDESCRIPTIONThe BD533, BD535, and BD537 are siliconepitaxial-base NPN power transistors in JedecTO-220 plastic package, intented for use inmedium power linear and switching applications.32The complementary PNP types are BD534,1BD536, and B

BD534/536/538Medium Power Linear and Switching Applications Low Saturation Voltage Complement to BD533, BD535 and BD537 respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD534 - 45 V : BD536 - 60 V : BD538 - 80 VVCEO C

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD533, BD535, BD537BD534, BD536, BD538BD533, 535, 537 NPN PLASTIC POWER TRANSISTORSBD534, 536, 538 PNP PLASTIC POWER TRANSISTORSMedium Power Linear and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD534/536/538 DESCRIPTION With TO-220C package Complement to type BD533/535/537 Low saturation voltage APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25

isc Silicon PNP Power Transistor BD538DESCRIPTIONDC Current Gain -: h = 40@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type BD537APPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -80 VCBOV Collect