BD544A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD544A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BD544A
BD544A Datasheet (PDF)
bd544 bd544a bd544b bd544c.pdf
isc Silicon PNP Power Transistors BD544/A/B/CDESCRIPTION70 W at 25C Case TemperatureComplement to Type BD543/A/B/C8 A Continuous Collector CurrentMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITBD544 -
bd544-a-b-c.pdf
BD544, BD544A, BD544B, BD544CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD543 SeriesTO-220 PACKAGE(TOP VIEW) 70 W at 25C Case Temperature 8 A Continuous Collector CurrentB 1 10 A Peak Collector CurrentC 2 Customer-Specified Selections Available 3EPin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximu
bd544-a-b-c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD544/A/B/C DESCRIPTION 70 W at 25C Case Temperature Complement to Type BD543/A/B/C 8 A Continuous Collector Current APPLICATIONS Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD544 -40BD544A -60 VCBO Collector
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KSU13003ER | SF118
History: KSU13003ER | SF118
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050