BD545 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD545  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 85 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO218

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BD545 datasheet

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 bd545 bd545a bd545b bd545c.pdf pdf_icon

BD545

isc Silicon NPN Power Transistor BD545/A/B/C DESCRIPTION Collector Current -I = 15A C Collector-Emitter Breakdown Voltage- V = 40V(Min)- BD545; 60V(Min)- BD545A (BR)CEO 80V(Min)- BD545B; 100V(Min)- BD545C Complement to Type BD546/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power

 ..2. Size:291K  inchange semiconductor
 bd545 a b c.pdf pdf_icon

BD545

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD545/A/B/C DESCRIPTION Collector Current -IC= 15A Collector-Emitter Breakdown Voltage- V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C Complement to Type BD546/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching appl

 0.1. Size:81K  bourns
 bd545-a-b-c.pdf pdf_icon

BD545

BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) BD546 Series 85 W at 25 C Case Temperature B 1 15 A Continuous Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temper

Otros transistores... BD543B, BD543C, BD543D, BD544, BD544A, BD544B, BD544C, BD544D, 2SD1047, BD545A, BD545B, BD545C, BD545D, BD546, BD546A, BD546B, BD546C