BD545 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor BD545/A/B/CDESCRIPTIONCollector Current -I = 15ACCollector-Emitter Breakdown Voltage-: V = 40V(Min)- BD545; 60V(Min)- BD545A(BR)CEO80V(Min)- BD545B; 100V(Min)- BD545CComplement to Type BD546/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD545/A/B/C DESCRIPTION Collector Current -IC= 15A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C Complement to Type BD546/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching appl

BD545, BD545A, BD545B, BD545CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD546 Series 85 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temper