BD545D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD545D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BD545D
BD545D Datasheet (PDF)
bd545-a-b-c.pdf
BD545, BD545A, BD545B, BD545CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD546 Series 85 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temper
bd545 bd545a bd545b bd545c.pdf
isc Silicon NPN Power Transistor BD545/A/B/CDESCRIPTIONCollector Current -I = 15ACCollector-Emitter Breakdown Voltage-: V = 40V(Min)- BD545; 60V(Min)- BD545A(BR)CEO80V(Min)- BD545B; 100V(Min)- BD545CComplement to Type BD546/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power
bd545 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD545/A/B/C DESCRIPTION Collector Current -IC= 15A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C Complement to Type BD546/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching appl
Otros transistores... BD544A , BD544B , BD544C , BD544D , BD545 , BD545A , BD545B , BD545C , TIP35C , BD546 , BD546A , BD546B , BD546C , BD546D , BD550 , BD550A , BD550B .
