BD644 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD644

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO66

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BD644 datasheet

 ..1. Size:193K  inchange semiconductor
 bd644.pdf pdf_icon

BD644

isc Silicon PNP Darlington Power Transistor BD644 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD643 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output

 0.1. Size:363K  comset
 bd644-bd646-bd648-bd650-bd652.pdf pdf_icon

BD644

SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

Otros transistores... BD633, BD634, BD635, BD636, BD637, BD638, BD643, BD643F, BD222, BD644F, BD645, BD645F, BD646, BD646F, BD647, BD647F, BD648