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BD644 Specs and Replacement


   Type Designator: BD644
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO66

 BD644 Transistor Equivalent Substitute - Cross-Reference Search

   

BD644 detailed specifications

 ..1. Size:193K  inchange semiconductor
 bd644.pdf pdf_icon

BD644

isc Silicon PNP Darlington Power Transistor BD644 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD643 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output ... See More ⇒

 0.1. Size:363K  comset
 bd644-bd646-bd648-bd650-bd652.pdf pdf_icon

BD644

SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒

Detailed specifications: BD633 , BD634 , BD635 , BD636 , BD637 , BD638 , BD643 , BD643F , BD222 , BD644F , BD645 , BD645F , BD646 , BD646F , BD647 , BD647F , BD648 .

History: BD637

Keywords - BD644 transistor specs

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