All Transistors. BD644 Datasheet

 

BD644 Datasheet and Replacement


   Type Designator: BD644
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO66
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BD644 Datasheet (PDF)

 ..1. Size:193K  inchange semiconductor
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BD644

isc Silicon PNP Darlington Power Transistor BD644DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CLow Saturation VoltageComplement to Type BD643Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull output

 0.1. Size:363K  comset
 bd644-bd646-bd648-bd650-bd652.pdf pdf_icon

BD644

SEMICONDUCTORSBD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: PN3904 | MPS2218A | MJE13001P | EMX1DXV6T5G | BD1540 | BD530-5 | 2SC3649R

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