BD648 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD648
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1 MHz
Ganancia de corriente contínua (hFE): 750
Encapsulados: TO220
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BD648 datasheet
bd648.pdf
isc Silicon PNP Darlington Power Transistor BD648 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD647 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output
bd644-bd646-bd648-bd650-bd652.pdf
SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings
bd648f.pdf
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD648F DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD649F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage
Otros transistores... BD644, BD644F, BD645, BD645F, BD646, BD646F, BD647, BD647F, C945, BD648F, BD649, BD649F, BD650, BD650F, BD651, BD651F, BD652
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