BD649F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD649F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 62 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO220F

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BD649F datasheet

 ..1. Size:213K  inchange semiconductor
 bd649f.pdf pdf_icon

BD649F

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BD649F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BD650F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 9.1. Size:331K  comset
 bd643-bd645-bd647-bd649-bd651.pdf pdf_icon

BD649F

SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

 9.2. Size:115K  power-innovations
 bd645 bd647 bd649 bd651.pdf pdf_icon

BD649F

BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE (TOP VIEW) 62.5 W at 25 C Case Temperature 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3 V, 3 A E 3 Pin 2 is in electrical contact with the mo

 9.3. Size:194K  inchange semiconductor
 bd649.pdf pdf_icon

BD649F

isc Silicon NPN Darlington Power Transistor BD649 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Low Saturation Voltage Complement to Type BD650 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output s

MOSTRAR MÁS

Otros transistores... BD645F, BD646, BD646F, BD647, BD647F, BD648, BD648F, BD649, 2N3055, BD650, BD650F, BD651, BD651F, BD652, BD652F, BD661, BD661K