BD649F Datasheet PDF and Equivalents Search

 ..1. Size:213K  inchange semiconductor

 bd649f.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BD649F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BD650F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

 9.1. Size:331K  comset

 bd643-bd645-bd647-bd649-bd651.pdf

SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒

 9.2. Size:115K  power-innovations

 bd645 bd647 bd649 bd651.pdf

BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE (TOP VIEW) 62.5 W at 25 C Case Temperature 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3 V, 3 A E 3 Pin 2 is in electrical contact with the mo... See More ⇒

 9.3. Size:194K  inchange semiconductor

 bd649.pdf

isc Silicon NPN Darlington Power Transistor BD649 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Low Saturation Voltage Complement to Type BD650 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output s... See More ⇒