BD652 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD651 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output

SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD652F DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD651F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stag