BD652 Datasheet. Specs and Replacement
Type Designator: BD652 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 62 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO220
BD652 Substitution
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BD652 datasheet
isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD651 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output ... See More ⇒
bd644-bd646-bd648-bd650-bd652.pdf ![]()
SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD652F DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD651F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stag... See More ⇒
Detailed specifications: BD648, BD648F, BD649, BD649F, BD650, BD650F, BD651, BD651F, S8050, BD652F, BD661, BD661K, BD662, BD662K, BD663, BD663A, BD663B
Keywords - BD652 pdf specs
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