All Transistors. BD652 Datasheet

 

BD652 Datasheet and Replacement


   Type Designator: BD652
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 62 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220

 BD652 Transistor Equivalent Substitute - Cross-Reference Search

   

BD652 Datasheet (PDF)

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BD652

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BD652

isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD651 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output ... See More ⇒

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BD652

SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒

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BD652

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD652F DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD651F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stag... See More ⇒

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Datasheet: BD648 , BD648F , BD649 , BD649F , BD650 , BD650F , BD651 , BD651F , S8050 , BD652F , BD661 , BD661K , BD662 , BD662K , BD663 , BD663A , BD663B .

History: AD130-3

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