BD675 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby BD675/DSEMICONDUCTOR TECHNICAL DATABD675BD675APlastic Medium-PowerBD677Silicon NPN DarlingtonsBD677A. . . for use as output devices in complementary generalpurpose amplifier applica-BD679tions. High DC Current Gain BD679AhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic ConstructionBD681* BD675, 675A, 677, 677A,

NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORSThe BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitB

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675ABD677, BD677ABD679, BD679ABD681, BD683TO126 Plastic PackageECBComplementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITSBD675A 677A 679AVCBOCollector B

Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors BD675/BD677/BD679 DESCRIPTION With TO-126 package Complement to type BD676/678/680 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary generalpurpose amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

isc Silicon NPN Darlington Power Transistor BD675DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 45 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5 AFE CComplement to Type BD676Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier ap

BD675A/677A/679A/681Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectivelyTO-1261NPN Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : B

BD675G, BD675AG,BD677G, BD677AG,BD679G, BD679AG, BD681GPlastic Medium-PowerSilicon NPN Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon NPN Darlingtontransistors can be used as output devices in complementary4.0 AMPERESgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesNPN SILICON High DC Current Gain60, 80, 100 VOLTS, 40 WATT

BD675G, BD675AG,BD677G, BD677AG,BD679G, BD679AG, BD681GPlastic Medium-PowerSilicon NPN Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon NPN Darlingtontransistors can be used as output devices in complementary4.0 AMPERESgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesNPN SILICON High DC Current Gain60, 80, 100 VOLTS, 40 WATT

isc Silicon NPN Darlington Power Transistor BD675ADESCRIPTIONCollectorEmitter Breakdown Voltage: V = 45 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2 AFE CComplement to Type BD676AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier ap

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION With TO-126 package Complement to type BD676A/678A/680A/682 DARLINGTON APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25