All Transistors. BD675 Datasheet

 

BD675 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD675
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126

 BD675 Transistor Equivalent Substitute - Cross-Reference Search

   

BD675 Datasheet (PDF)

 ..1. Size:112K  motorola
bd675 bd675a bd677 bd677a bd679 bd679a bd681 bd675 bd677 bd679 bd681.pdf

BD675 BD675

Order this documentMOTOROLAby BD675/DSEMICONDUCTOR TECHNICAL DATABD675BD675APlastic Medium-PowerBD677Silicon NPN DarlingtonsBD677A. . . for use as output devices in complementary

 ..2. Size:88K  comset
bd675 bd677 bd679 bd681.pdf

BD675 BD675

NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORSThe BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitB

 ..3. Size:176K  cdil
bd675 bd677 bd679 bd681 bd683.pdf

BD675 BD675

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675ABD677, BD677ABD679, BD679ABD681, BD683TO126 Plastic PackageECBComplementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITSBD675A 677A 679AVCBOCollector B

 ..4. Size:118K  inchange semiconductor
bd675 bd677 bd679.pdf

BD675 BD675

Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors BD675/BD677/BD679 DESCRIPTION With TO-126 package Complement to type BD676/678/680 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary generalpurpose amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

 ..5. Size:188K  inchange semiconductor
bd675.pdf

BD675 BD675

isc Silicon NPN Darlington Power Transistor BD675DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 45 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5 AFE CComplement to Type BD676Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier ap

 0.1. Size:39K  fairchild semi
bd675a bd677a bd679a bd681.pdf

BD675 BD675

BD675A/677A/679A/681Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectivelyTO-1261NPN Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : B

 0.2. Size:77K  onsemi
bd675ag.pdf

BD675 BD675

BD675G, BD675AG,BD677G, BD677AG,BD679G, BD679AG, BD681GPlastic Medium-PowerSilicon NPN Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon NPN Darlingtontransistors can be used as output devices in complementary4.0 AMPERESgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesNPN SILICON High DC Current Gain60, 80, 100 VOLTS, 40 WATT

 0.3. Size:77K  onsemi
bd675g.pdf

BD675 BD675

BD675G, BD675AG,BD677G, BD677AG,BD679G, BD679AG, BD681GPlastic Medium-PowerSilicon NPN Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon NPN Darlingtontransistors can be used as output devices in complementary4.0 AMPERESgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesNPN SILICON High DC Current Gain60, 80, 100 VOLTS, 40 WATT

 0.4. Size:189K  inchange semiconductor
bd675a.pdf

BD675 BD675

isc Silicon NPN Darlington Power Transistor BD675ADESCRIPTIONCollectorEmitter Breakdown Voltage: V = 45 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2 AFE CComplement to Type BD676AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier ap

 0.5. Size:117K  inchange semiconductor
bd675a bd677a bd679a bd681.pdf

BD675 BD675

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION With TO-126 package Complement to type BD676A/678A/680A/682 DARLINGTON APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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