BD675A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD675A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1 MHz
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar BD675A
BD675A Datasheet (PDF)
bd675 bd675a bd677 bd677a bd679 bd679a bd681 bd675 bd677 bd679 bd681.pdf
Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary general purpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A,
bd675a bd677a bd679a bd681.pdf
BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD675A 45 V BD677A 60 V B
bd675a.pdf
isc Silicon NPN Darlington Power Transistor BD675A DESCRIPTION Collector Emitter Breakdown Voltage V = 45 V (BR)CEO DC Current Gain h = 750(Min) @ I = 2 A FE C Complement to Type BD676A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier ap
bd675a bd677a bd679a bd681.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION With TO-126 package Complement to type BD676A/678A/680A/682 DARLINGTON APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25
Otros transistores... BD662K , BD663 , BD663A , BD663B , BD664 , BD664A , BD664B , BD675 , TIP31C , BD675H , BD676 , BD676A , BD676H , BD677 , BD677A , BD677H , BD678 .
History: BD676A | BD677A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
c2314 transistor | c2482 transistor | 2sc1222 replacement | 2sa725 | c5242 transistor | 2sa726 replacement | a1941 datasheet | hrf3205







