BD708 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD708

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO66

 Búsqueda de reemplazo de BD708

- Selecciónⓘ de transistores por parámetros

 

BD708 datasheet

 ..1. Size:1174K  st
bd707 bd708 bd709 bd711 bd712.pdf pdf_icon

BD708

BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec 3 2 TO-220 plastic package. They are intented for 1 use in power linear and switching applications. The BD707 and BD711 compl

 ..2. Size:110K  st
bd707 bd708 bd709 bd710 bd711 bd712.pdf pdf_icon

BD708

BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709, and BD711 are silicon 3 2 epitaxial-base NPN power transistors in Jedec 1 TO-220 plastic package, intented for use in power linear and switching applications. TO

 ..3. Size:60K  inchange semiconductor
bd708 bd710 bd712.pdf pdf_icon

BD708

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD708 BD710 BD712 DESCRIPTION With TO-220C package Complement to type BD707/709/711 APPLICATIONS Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAME

 ..4. Size:193K  inchange semiconductor
bd708.pdf pdf_icon

BD708

isc Silicon PNP Power Transistor BD708 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -0.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min.) CEO(SUS) Complement to Type BD707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =

Otros transistores... BD699A, BD700, BD700A, BD701, BD702, BD705, BD706, BD707, 13005, BD709, BD710, BD711, BD712, BD719, BD720, BD721, BD722