BD710 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD710
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO66
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BD710 datasheet
bd707 bd708 bd709 bd710 bd711 bd712.pdf
BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709, and BD711 are silicon 3 2 epitaxial-base NPN power transistors in Jedec 1 TO-220 plastic package, intented for use in power linear and switching applications. TO
bd708 bd710 bd712.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD708 BD710 BD712 DESCRIPTION With TO-220C package Complement to type BD707/709/711 APPLICATIONS Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAME
bd710.pdf
isc Silicon PNP Power Transistor BD710 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -0.5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min.) CEO(SUS) Complement to Type BD709 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =
Otros transistores... BD700A, BD701, BD702, BD705, BD706, BD707, BD708, BD709, 2N4401, BD711, BD712, BD719, BD720, BD721, BD722, BD723, BD724
History: BD707
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