BD710 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD710
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO66
BD710 Transistor Equivalent Substitute - Cross-Reference Search
BD710 Datasheet (PDF)
bd707 bd708 bd709 bd710 bd711 bd712.pdf
BD707/709/711BD708/710/712COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe BD707, BD709, and BD711 are silicon32epitaxial-base NPN power transistors in Jedec1TO-220 plastic package, intented for use inpower linear and switching applications.TO
bd708 bd710 bd712.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD708 BD710 BD712 DESCRIPTION With TO-220C package Complement to type BD707/709/711 APPLICATIONS Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAME
bd710.pdf
isc Silicon PNP Power Transistor BD710DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min.)CEO(SUS)Complement to Type BD709Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T =
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
