BD710 Datasheet and Replacement
Type Designator: BD710
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO66
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BD710 Datasheet (PDF)
bd707 bd708 bd709 bd710 bd711 bd712.pdf

BD707/709/711BD708/710/712COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe BD707, BD709, and BD711 are silicon32epitaxial-base NPN power transistors in Jedec1TO-220 plastic package, intented for use inpower linear and switching applications.TO
bd708 bd710 bd712.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD708 BD710 BD712 DESCRIPTION With TO-220C package Complement to type BD707/709/711 APPLICATIONS Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAME
bd710.pdf

isc Silicon PNP Power Transistor BD710DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min.)CEO(SUS)Complement to Type BD709Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T =
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: DTC124EEB | 2N2904 | NXP3875G | ECG185
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History: DTC124EEB | 2N2904 | NXP3875G | ECG185



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