BD712 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD712
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO220
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BD712 Datasheet (PDF)
bd707 bd708 bd709 bd711 bd712.pdf
BD707/709/711BD708/712COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are siliconEpitaxial-Base NPN power transistors in Jedec32TO-220 plastic package. They are intented for1use in power linear and switching applications.The BD707 and BD711 compl
bd707 bd708 bd709 bd710 bd711 bd712.pdf
BD707/709/711BD708/710/712COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe BD707, BD709, and BD711 are silicon32epitaxial-base NPN power transistors in Jedec1TO-220 plastic package, intented for use inpower linear and switching applications.TO
bd708 bd710 bd712.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD708 BD710 BD712 DESCRIPTION With TO-220C package Complement to type BD707/709/711 APPLICATIONS Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAME
bd712.pdf
isc Silicon PNP Power Transistor BD712DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min.)CEO(SUS)Complement to Type BD711Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: AD702S | DT1610 | HN1C03F
History: AD702S | DT1610 | HN1C03F
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050