BD719 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD719

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 36 W

Tensión colector-base (Vcb): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO126

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BD719 datasheet

 ..1. Size:190K  inchange semiconductor
 bd719 bd721 bd723 bd725.pdf pdf_icon

BD719

isc Silicon NPN Power Transistor BD719/721/723/725 DESCRIPTION DC Current Gain- h = 20(Min)@ I = 2A FE C Complement to Type BD720/722/724/726 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 ..2. Size:189K  inchange semiconductor
 bd719.pdf pdf_icon

BD719

isc Silicon NPN Power Transistor BD719 DESCRIPTION DC Current Gain- h = 40@ I = 0.5A FE C Collector-Emitter Breakdown Voltage - V = 60V(Min) (BR)CEO Complement to type BD720 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATIN

Otros transistores... BD705, BD706, BD707, BD708, BD709, BD710, BD711, BD712, NJW0281G, BD720, BD721, BD722, BD723, BD724, BD725, BD726, BD733