All Transistors. BD719 Datasheet

 

BD719 Datasheet and Replacement


   Type Designator: BD719
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO126
 

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BD719 Datasheet (PDF)

 ..1. Size:190K  inchange semiconductor
 bd719 bd721 bd723 bd725.pdf pdf_icon

BD719

isc Silicon NPN Power Transistor BD719/721/723/725DESCRIPTIONDC Current Gain-: h = 20(Min)@ I = 2AFE CComplement to Type BD720/722/724/726Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 ..2. Size:189K  inchange semiconductor
 bd719.pdf pdf_icon

BD719

isc Silicon NPN Power Transistor BD719DESCRIPTIONDC Current Gain-: h = 40@ I = 0.5AFE CCollector-Emitter Breakdown Voltage -: V = 60V(Min)(BR)CEOComplement to type BD720Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output and general purposeamplifier applications.ABSOLUTE MAXIMUM RATIN

Datasheet: BD705 , BD706 , BD707 , BD708 , BD709 , BD710 , BD711 , BD712 , D965 , BD720 , BD721 , BD722 , BD723 , BD724 , BD725 , BD726 , BD733 .

History: MPSH10RLRPG | HSB857J

Keywords - BD719 transistor datasheet

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