BD723 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD723

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 36 W

Tensión colector-base (Vcb): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO126

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BD723 datasheet

 ..1. Size:190K  inchange semiconductor
 bd719 bd721 bd723 bd725.pdf pdf_icon

BD723

isc Silicon NPN Power Transistor BD719/721/723/725 DESCRIPTION DC Current Gain- h = 20(Min)@ I = 2A FE C Complement to Type BD720/722/724/726 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 ..2. Size:189K  inchange semiconductor
 bd723.pdf pdf_icon

BD723

isc Silicon NPN Power Transistor BD723 DESCRIPTION DC Current Gain- h = 40@ I = 0.5A FE C Collector-Emitter Breakdown Voltage - V = 100V(Min) (BR)CEO Complement to type BD724 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATI

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