BD723 Specs and Replacement
Type Designator: BD723
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO126
BD723 Substitution
- BJT ⓘ Cross-Reference Search
BD723 datasheet
isc Silicon NPN Power Transistor BD719/721/723/725 DESCRIPTION DC Current Gain- h = 20(Min)@ I = 2A FE C Complement to Type BD720/722/724/726 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
isc Silicon NPN Power Transistor BD723 DESCRIPTION DC Current Gain- h = 40@ I = 0.5A FE C Collector-Emitter Breakdown Voltage - V = 100V(Min) (BR)CEO Complement to type BD724 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: BD709, BD710, BD711, BD712, BD719, BD720, BD721, BD722, BC549, BD724, BD725, BD726, BD733, BD734, BD735, BD736, BD737
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