2N2903 Todos los transistores

Introduzca al menos 3 números o letras

2N2903 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N2903

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 60 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hfe): 125

Empaquetado / Estuche: TO77-1

Búsqueda de reemplazo de transistor bipolar 2N2903

 

2N2903 Datasheet (PDF)

1.1. 2n2903.pdf Size:83K _central

2N2903

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.1. 2n2900.pdf Size:155K _rca

2N2903

5.2. st2n2907-a.pdf Size:1188K _update

2N2903
2N2903



5.3. 2n2907aubc.pdf Size:100K _upd

2N2903
2N2903

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2906A 2N2907A JANSD – 10K Rads (Si) 2N2906AL 2N2907AL JANSP – 30K Rads (Si) 2N2906AUA 2N2907AUA JANS

5.4. 2n2904acsm.pdf Size:10K _upd

2N2903

2N2904ACSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 ± 0.10 Hermetically sealed LCC1 (0.02 ± 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 (0.055) 1.02 ± 0.10 max. VCEO = 60V A = (0.04 ± 0.00

5.5. 2n2906aua.pdf Size:100K _upd

2N2903
2N2903

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2906A 2N2907A JANSD – 10K Rads (Si) 2N2906AL 2N2907AL JANSP – 30K Rads (Si) 2N2906AUA 2N2907AUA JANS

5.6. 2n2907acecc.pdf Size:10K _upd

2N2903

2N2907ACECC Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX

5.7. 2n2907ac3a.pdf Size:200K _upd

2N2903
2N2903

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

5.8. 2n2906dcsm.pdf Size:10K _upd

2N2903

2N2906DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 60V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.6A C (0.0

5.9. 2n2907ahr.pdf Size:502K _upd

2N2903
2N2903

2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value 1 2 3 BVCEO 60 V TO-18 IC (max) 0.6 A 3 3 HFE at 10 V - 150 mA > 100 4 1 1 2 2 • Hermetic packages LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. • European preferred part list EPPL Figure 1. Internal schematic diagram Description T

5.10. 2n2907ac3c.pdf Size:200K _upd

2N2903
2N2903

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

5.11. 2n2906aubc.pdf Size:99K _upd

2N2903
2N2903

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS qua

5.12. 2n2906al.pdf Size:100K _upd

2N2903
2N2903

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2906A 2N2907A JANSD – 10K Rads (Si) 2N2906AL 2N2907AL JANSP – 30K Rads (Si) 2N2906AUA 2N2907AUA JANS

5.13. 2n2907al.pdf Size:100K _upd

2N2903
2N2903

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2906A 2N2907A JANSD – 10K Rads (Si) 2N2906AL 2N2907AL JANSP – 30K Rads (Si) 2N2906AUA 2N2907AUA JANS

5.14. 2n2907ac1b.pdf Size:563K _upd

2N2903
2N2903

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

5.15. 2n2907acsmcecc.pdf Size:22K _upd

2N2903
2N2903

2N2907ACSM SEME LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0.10 • SILICON PLANAR EPITAXIAL PNP (0.02 ± 0.004) 0.31 rad. (0.012) TRANSISTOR 3 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21 • CE

5.16. 2n2907adcsm.pdf Size:33K _upd

2N2903
2N2903

2N2907ADCSM SEME LAB DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS FEATURES 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 • DUAL SILICON PLANAR EPITAXIAL (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) PNP TRANSISTORS 2 3 • HERMETIC CERAMIC

5.17. 2n2904csm.pdf Size:10K _upd

2N2903

2N2904CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 ± 0.10 Hermetically sealed LCC1 (0.02 ± 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 (0.055) 1.02 ± 0.10 max. VCEO = 60V A = (0.04 ± 0.004

5.18. 2n2904dcsm.pdf Size:10K _upd

2N2903

2N2904DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 60V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.6A C (0.0

5.19. 2n2906aub.pdf Size:100K _upd

2N2903
2N2903

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2906A 2N2907A JANSD – 10K Rads (Si) 2N2906AL 2N2907AL JANSP – 30K Rads (Si) 2N2906AUA 2N2907AUA JANS

5.20. 2n2905acsm.pdf Size:361K _upd

2N2903
2N2903

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2905ACSM • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Vol

5.21. 2n2907acsm4r.pdf Size:144K _upd

2N2903
2N2903

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter V

5.22. 2n2907ac1a.pdf Size:563K _upd

2N2903
2N2903

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

5.23. 2n2907aua.pdf Size:89K _upd

2N2903
2N2903

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AUA • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

5.24. 2n2907ac3b.pdf Size:200K _upd

2N2903
2N2903

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

5.25. mtp2n2907a.pdf Size:240K _motorola

2N2903
2N2903

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2907A/D Amplifier Transistor PNP Silicon P2N2907A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 CollectorEmitter Voltage VCEO 60 Vdc 3 CollectorBase Voltage VCBO 60 Vdc CASE 2904, STYLE 17 EmitterBase Voltage VEBO 5.0 Vdc TO92 (TO226AA) Collector Current Continuous IC 600 m

5.26. 2n2905 2n2905a cnv 2.pdf Size:55K _philips

2N2903
2N2903

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2905; 2N2905A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 60 V).

5.27. 2n2907 2n2907a 1.pdf Size:52K _philips

2N2903
2N2903

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors 1997 May 30 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitter 2 ba

5.28. 2n2906 2n2906a 2.pdf Size:52K _philips

2N2903
2N2903

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906; 2N2906A PNP switching transistors 1997 Jun 02 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitter 2 ba

5.29. 2n2905a 2n2907a.pdf Size:727K _st

2N2903
2N2903

2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCB

5.30. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2903
2N2903

2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- 10

5.31. 2n2904-a 2n2905-a.pdf Size:59K _central

2N2903

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.32. 2n2906 2n2907.pdf Size:96K _central

2N2903
2N2903

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.33. 2n2905a(to-39).pdf Size:229K _mcc

2N2903
2N2903

MCC TM Micro Commercial Components Ordering Information : Device Packing Part Number-BP Bulk;50pcs/Box ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any li

5.34. 2n2907 2n2907a(to-18).pdf Size:453K _mcc

2N2903
2N2903

MCC 2N2907 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2N2907A CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features High current (max.600mA) Low voltage (max.60V) PNP Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol R

5.35. p2n2907a.pdf Size:162K _onsemi

2N2903
2N2903

P2N2907A Amplifier Transistor PNP Silicon Features These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO --60 Vdc Collector--Base Voltage VCBO --60 Vdc 3 Emitter--Base Voltage VEBO --5.0 Vdc EMITTER Collector Current -- Continuous IC --600 mAdc Total Device Dissipation @ TA =25C PD 625 mW Dera

5.36. 2n2907aub.pdf Size:242K _optek

2N2903
2N2903

Product Bulletin JANTX, JANTXV, 2N2907AUB September 1996 Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUB Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . .

5.37. 2n2907aua.pdf Size:95K _optek

2N2903
2N2903

5.38. 2n2905.pdf Size:70K _advanced-semi

2N2903
2N2903

SILICON PNP TRANSISTOR DESCRIPTION: The 2N2905A is Designed for PACKAGE STYLE TO- 39 General Purpose Amplifier and Switching Applications MAXIMUM RATINGS I 600 mA V -60 V P 3.0 W @ T = 25 C T -65 C to +200 C 1= E I ER 2 = BASE T -65 C to +200 C 3 = C LLEC R ? 58 C/W ? ? ? 1. Y CHARACTERISTICS = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO I = 1 -6 V B

5.39. 2n2906 7.pdf Size:141K _cdil

2N2903
2N2903

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Conti

5.40. p2n2907 a.pdf Size:91K _cdil

2N2903
2N2903

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package E CB Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 P2N2907A UNIT VCEO Col

5.41. 2n2906a 07a.pdf Size:226K _cdil

2N2903
2N2903

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A 2N2907A TO-18 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2906A, 07A UNIT Collector -Emitter Voltage VCEO 60 V Collector -Base Voltage VCBO 60 V Emitter -Base Voltage VEBO 5.0 V Col

5.42. 2n2904 05.pdf Size:75K _cdil

2N2903
2N2903

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous

5.43. 2n2904a 05a.pdf Size:146K _cdil

2N2903
2N2903

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904A 2N2905A TO-39 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2904A, 05A UNIT Collector -Emitter Voltage VCEO 60 V Collector -Base Voltage VCBO 60 V Emitter -Base Voltage VEBO 5.0 V Col

5.44. 2n2904u.pdf Size:51K _kec

2N2903
2N2903

SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=50nA(Max.), IBL=50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=30V, VEB=3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Satura

5.45. 2n2906u.pdf Size:52K _kec

2N2903
2N2903

SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=-50nA(Max.), IBL=-50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=-30V, VEB=-3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Sa

5.46. 2n2904u1.pdf Size:51K _kec

2N2903
2N2903

SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=50nA(Max.), IBL=50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=30V, VEB=3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Satur

5.47. 2n2904e.pdf Size:51K _kec

2N2903
2N2903

SEMICONDUCTOR 2N2904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 DIM MILLIMETERS Low Leakage Current _ A 1.6 + 0.05 _ A1 1.0 + 0.05 : ICEX=50nA(Max.), IBL=50nA(Max.) 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 @VCE=30V, VEB=3V. C 0.50 3 4 Excellent DC Current Gain Linearity. _ D 0.2 + 0.05 _ H 0.5 + 0.05 Low S

5.48. 2n2906e.pdf Size:50K _kec

2N2903
2N2903

SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 DIM MILLIMETERS Low Leakage Current _ A 1.6 + 0.05 _ A1 1.0 + 0.05 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 @VCE=-30V, VEB=-3V. C 0.50 3 4 Excellent DC Current Gain Linearity. _ D 0.2 + 0.05 _ H 0.5 + 0.05

5.49. 2n2907as.pdf Size:377K _first_silicon

2N2903
2N2903

SEMICONDUCTOR 2N2907AS TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-23 package which 3 is designed for low power surface mount applications. 2 Features 1 compliance with RoHS requirements. • We declare that the material of product SOT– 23 ORDERING INFORMATION †

5.50. 2n2907au.pdf Size:265K _first_silicon

2N2903
2N2903

SEMICONDUCTOR 2N2907AU TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-323/SC-70 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. • We declare that the material of product SC-70 / SOT– 323 ORDERING IN

Otros transistores... 2N2896 , 2N2897 , 2N2898 , 2N2899 , 2N29 , 2N290 , 2N2900 , 2N2902 , SS8050 , 2N2903A , 2N2904 , 2N2904A , 2N2904AL , 2N2904AS , 2N2904L , 2N2904S , 2N2905 .

 


2N2903
  2N2903
  2N2903
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |


Introduzca al menos 1 números o letras