BD745C Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD745C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 115 W

Tensión colector-base (Vcb): 110 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO218

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BD745C datasheet

 ..1. Size:217K  inchange semiconductor
 bd745 bd745a bd745b bd745c.pdf pdf_icon

BD745C

isc Silicon NPN Power Transistor BD745/A/B/C DESCRIPTION Collector Current -I = 20A C Collector-Emitter Breakdown Voltage- V = 45V(Min)- BD745; 60V(Min)- BD745A (BR)CEO 80V(Min)- BD745B; 100V(Min)- BD745C Complement to Type BD746/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power

 9.1. Size:86K  bourns
 bd745-a-b-c.pdf pdf_icon

BD745C

BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) BD746 Series 115 W at 25 C Case Temperature B 1 20 A Continuous Collector Current C 2 25 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma

 9.2. Size:93K  inchange semiconductor
 bd745 a b c.pdf pdf_icon

BD745C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD745/A/B/C DESCRIPTION With TO-3PN package Complement to type BD746/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

Otros transistores... BD744B, BD744C, BD744D, BD744E, BD744F, BD745, BD745A, BD745B, TIP41C, BD745D, BD745E, BD745F, BD746, BD746A, BD746B, BD746C, BD746D