All Transistors. BD745C Datasheet

 

BD745C Datasheet and Replacement


   Type Designator: BD745C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 115 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO218
 

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BD745C Datasheet (PDF)

 ..1. Size:217K  inchange semiconductor
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BD745C

isc Silicon NPN Power Transistor BD745/A/B/CDESCRIPTIONCollector Current -I = 20ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)- BD745; 60V(Min)- BD745A(BR)CEO80V(Min)- BD745B; 100V(Min)- BD745CComplement to Type BD746/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power

 9.1. Size:86K  bourns
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BD745C

BD745, BD745A, BD745B, BD745CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD746 Series 115 W at 25C Case TemperatureB1 20 A Continuous Collector CurrentC 2 25 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma

 9.2. Size:93K  inchange semiconductor
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BD745C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD745/A/B/C DESCRIPTION With TO-3PN package Complement to type BD746/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

Datasheet: BD744B , BD744C , BD744D , BD744E , BD744F , BD745 , BD745A , BD745B , C945 , BD745D , BD745E , BD745F , BD746 , BD746A , BD746B , BD746C , BD746D .

History: CSD1506P | MMBT404 | 2SD1609 | 2SC3944A | 2SC1740 | 40306 | MMBT4354

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