BD745D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD745D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 115 W
Tensión colector-base (Vcb): 130 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BD745D
BD745D Datasheet (PDF)
bd745-a-b-c.pdf
BD745, BD745A, BD745B, BD745CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD746 Series 115 W at 25C Case TemperatureB1 20 A Continuous Collector CurrentC 2 25 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma
bd745 bd745a bd745b bd745c.pdf
isc Silicon NPN Power Transistor BD745/A/B/CDESCRIPTIONCollector Current -I = 20ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)- BD745; 60V(Min)- BD745A(BR)CEO80V(Min)- BD745B; 100V(Min)- BD745CComplement to Type BD746/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power
bd745 a b c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD745/A/B/C DESCRIPTION With TO-3PN package Complement to type BD746/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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