BD745D Datasheet, Equivalent, Cross Reference Search
Type Designator: BD745D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO218
BD745D Transistor Equivalent Substitute - Cross-Reference Search
BD745D Datasheet (PDF)
bd745-a-b-c.pdf
BD745, BD745A, BD745B, BD745CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD746 Series 115 W at 25C Case TemperatureB1 20 A Continuous Collector CurrentC 2 25 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma
bd745 bd745a bd745b bd745c.pdf
isc Silicon NPN Power Transistor BD745/A/B/CDESCRIPTIONCollector Current -I = 20ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)- BD745; 60V(Min)- BD745A(BR)CEO80V(Min)- BD745B; 100V(Min)- BD745CComplement to Type BD746/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power
bd745 a b c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD745/A/B/C DESCRIPTION With TO-3PN package Complement to type BD746/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC94 | KT368BM | FMMTA63 | MUN2216LT2 | MT0413
History: 2SC94 | KT368BM | FMMTA63 | MUN2216LT2 | MT0413
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