BD745D Specs and Replacement
Type Designator: BD745D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO218
BD745D Substitution
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BD745D datasheet
BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) BD746 Series 115 W at 25 C Case Temperature B 1 20 A Continuous Collector Current C 2 25 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma... See More ⇒
bd745 bd745a bd745b bd745c.pdf 
isc Silicon NPN Power Transistor BD745/A/B/C DESCRIPTION Collector Current -I = 20A C Collector-Emitter Breakdown Voltage- V = 45V(Min)- BD745; 60V(Min)- BD745A (BR)CEO 80V(Min)- BD745B; 100V(Min)- BD745C Complement to Type BD746/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD745/A/B/C DESCRIPTION With TO-3PN package Complement to type BD746/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli... See More ⇒
Detailed specifications: BD744C, BD744D, BD744E, BD744F, BD745, BD745A, BD745B, BD745C, BD139, BD745E, BD745F, BD746, BD746A, BD746B, BD746C, BD746D, BD746E
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