BD746D Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD746D

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 115 W

Tensión colector-base (Vcb): 130 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO218

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BD746D datasheet

 9.1. Size:86K  bourns
 bd746-a-b-c.pdf pdf_icon

BD746D

BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD745 Series (TOP VIEW) 115 W at 25 C Case Temperature B 1 20 A Continuous Collector Current C 2 25 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max

 9.2. Size:93K  inchange semiconductor
 bd746 a b c.pdf pdf_icon

BD746D

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD746/A/B/C DESCRIPTION With TO-3PN package Complement to type BD745/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

 9.3. Size:219K  inchange semiconductor
 bd746 bd746a bd746b bd746c.pdf pdf_icon

BD746D

isc Silicon PNP Power Transistor BD746/A/B/C DESCRIPTION Collector Current -I = -20A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD746; -60V(Min)- BD746A (BR)CEO -80V(Min)- BD746B; -100V(Min)- BD746C Complement to Type BD745/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose

Otros transistores... BD745C, BD745D, BD745E, BD745F, BD746, BD746A, BD746B, BD746C, 2N3055, BD746E, BD746F, BD750, BD750A, BD750B, BD750C, BD751, BD751A