BD746D Datasheet and Replacement
Type Designator: BD746D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO218
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BD746D Datasheet (PDF)
bd746-a-b-c.pdf

BD746, BD746A, BD746B, BD746CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGEBD745 Series (TOP VIEW) 115 W at 25C Case TemperatureB1 20 A Continuous Collector CurrentC 2 25 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute max
bd746 a b c.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD746/A/B/C DESCRIPTION With TO-3PN package Complement to type BD745/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli
bd746 bd746a bd746b bd746c.pdf

isc Silicon PNP Power Transistor BD746/A/B/CDESCRIPTIONCollector Current -I = -20ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD746; -60V(Min)- BD746A(BR)CEO-80V(Min)- BD746B; -100V(Min)- BD746CComplement to Type BD745/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA1051A | 2N2341 | 2SB464 | MMBT4122 | 2SB197 | 2SA843 | 2N1963
Keywords - BD746D transistor datasheet
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History: 2SA1051A | 2N2341 | 2SB464 | MMBT4122 | 2SB197 | 2SA843 | 2N1963



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