BD750C Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD750C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250 W

Tensión colector-base (Vcb): 140 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO3

 Búsqueda de reemplazo de BD750C

- Selecciónⓘ de transistores por parámetros

 

BD750C datasheet

 ..1. Size:114K  inchange semiconductor
 bd750b bd750c .pdf pdf_icon

BD750C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750B/750C DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = -100V(Min)- BD751B = -130V(Min)- BD751C High Power Dissipation Complement to Type BD751B/751C APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

 ..2. Size:211K  inchange semiconductor
 bd750b bd750c.pdf pdf_icon

BD750C

isc Silicon PNP Power Transistors BD750B/750C DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min)- BD751B CEO(SUS) = -130V(Min)- BD751C High Power Dissipation Complement to Type BD751B/751C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUT

 9.1. Size:212K  inchange semiconductor
 bd750 bd750a.pdf pdf_icon

BD750C

isc Silicon PNP Power Transistors BD750/750A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -90V(Min)- BD750 CEO(SUS) = -120V(Min)- BD750A High Power Dissipation Complement to Type BD751/751A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MA

 9.2. Size:75K  inchange semiconductor
 bd750 bd750a .pdf pdf_icon

BD750C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750/750A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A High Power Dissipation Complement to Type BD751/751A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 )

MOSTRAR MÁS

Otros transistores... BD746B, BD746C, BD746D, BD746E, BD746F, BD750, BD750A, BD750B, 2SA1943, BD751, BD751A, BD751B, BD751C, BD775, BD776, BD777, BD778