BD810 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD810

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1.5 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO220

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BD810 datasheet

 ..1. Size:104K  motorola
 bd808 bd810.pdf pdf_icon

BD810

Order this document MOTOROLA by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon *Motorola Preferred Device PNP Transistor 10 AMPERE . . . designed for use in high power audio amplifiers utilizing complementary or quasi POWER TRANSISTORS complementary circuits. PNP SILICON DC Current Gain hFE = 30 (Min) @ IC = 2.0 Adc

 ..2. Size:224K  onsemi
 bd809 bd810.pdf pdf_icon

BD810

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. www.onsemi.com Features 10 AMPERE High DC Current Gain POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* 80 VOLTS 90 WATTS MAXIMUM RATINGS PNP NPN Rating Symbol Value Un

 ..3. Size:121K  jmnic
 bd810.pdf pdf_icon

BD810

Power Transistors www.jmnic.com BD810 Silicon PNP Transistors Features B C E Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 5.

 ..4. Size:212K  inchange semiconductor
 bd810.pdf pdf_icon

BD810

isc Silicon PNP Power Transistor BD810 DESCRIPTION DC Current Gain - h =30@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type BD809 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circ

MOSTRAR MÁS

Otros transistores... BD800, BD801, BD802, BD805, BD806, BD807, BD808, BD809, 8050, BD813, BD813A, BD814, BD814A, BD815, BD815A, BD816, BD816A