BD810 Specs and Replacement

Type Designator: BD810

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

 BD810 Substitution

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BD810 datasheet

 ..1. Size:104K  motorola

 bd808 bd810.pdf pdf_icon

BD810

Order this document MOTOROLA by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon *Motorola Preferred Device PNP Transistor 10 AMPERE . . . designed for use in high power audio amplifiers utilizing complementary or quasi POWER TRANSISTORS complementary circuits. PNP SILICON DC Current Gain hFE = 30 (Min) @ IC = 2.0 Adc ... See More ⇒

 ..2. Size:224K  onsemi

 bd809 bd810.pdf pdf_icon

BD810

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. www.onsemi.com Features 10 AMPERE High DC Current Gain POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* 80 VOLTS 90 WATTS MAXIMUM RATINGS PNP NPN Rating Symbol Value Un... See More ⇒

 ..3. Size:121K  jmnic

 bd810.pdf pdf_icon

BD810

Power Transistors www.jmnic.com BD810 Silicon PNP Transistors Features B C E Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 5.... See More ⇒

 ..4. Size:212K  inchange semiconductor

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BD810

isc Silicon PNP Power Transistor BD810 DESCRIPTION DC Current Gain - h =30@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type BD809 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circ... See More ⇒

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Detailed specifications: BD800, BD801, BD802, BD805, BD806, BD807, BD808, BD809, 8050, BD813, BD813A, BD814, BD814A, BD815, BD815A, BD816, BD816A

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