BD896A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD896A

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO220

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BD896A datasheet

 ..1. Size:212K  inchange semiconductor
 bd896a.pdf pdf_icon

BD896A

isc Silicon PNP Darlington Power Transistor BD896A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -4A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD895A Minimum Lot-to-Lot variations for robust device performance and reliable operation

 ..2. Size:120K  inchange semiconductor
 bd896a bd898a bd900a.pdf pdf_icon

BD896A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em

 9.1. Size:121K  inchange semiconductor
 bd896 bd898 bd900 bd902.pdf pdf_icon

BD896A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896/898/900/902 DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3

 9.2. Size:212K  inchange semiconductor
 bd896.pdf pdf_icon

BD896A

isc Silicon PNP Darlington Power Transistor BD896 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD895 Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

MOSTRAR MÁS

Otros transistores... BD876, BD877, BD878, BD879, BD880, BD895, BD895A, BD896, A733, BD897, BD897A, BD898, BD898A, BD899, BD899A, BD900, BD900A