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BD896A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD896A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO220
 

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BD896A Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
bd896a.pdf pdf_icon

BD896A

isc Silicon PNP Darlington Power Transistor BD896ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD895AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation

 ..2. Size:120K  inchange semiconductor
bd896a bd898a bd900a.pdf pdf_icon

BD896A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

 9.1. Size:121K  inchange semiconductor
bd896 bd898 bd900 bd902.pdf pdf_icon

BD896A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896/898/900/902 DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

 9.2. Size:212K  inchange semiconductor
bd896.pdf pdf_icon

BD896A

isc Silicon PNP Darlington Power Transistor BD896DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD895Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

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History: KT209Zh | BCW65ALT1 | 2SC3138 | 2SC3152M | 2SA1783 | 2SD1609 | D28A13

 

 
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