All Transistors. BD896A Datasheet

 

BD896A Datasheet and Replacement


   Type Designator: BD896A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
 

 BD896A Substitution

   - BJT ⓘ Cross-Reference Search

   

BD896A Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
 bd896a.pdf pdf_icon

BD896A

isc Silicon PNP Darlington Power Transistor BD896ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD895AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation

 ..2. Size:120K  inchange semiconductor
 bd896a bd898a bd900a.pdf pdf_icon

BD896A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

 9.1. Size:121K  inchange semiconductor
 bd896 bd898 bd900 bd902.pdf pdf_icon

BD896A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896/898/900/902 DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

 9.2. Size:212K  inchange semiconductor
 bd896.pdf pdf_icon

BD896A

isc Silicon PNP Darlington Power Transistor BD896DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD895Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

SHOW MORE

Datasheet: BD876 , BD877 , BD878 , BD879 , BD880 , BD895 , BD895A , BD896 , TIP31C , BD897 , BD897A , BD898 , BD898A , BD899 , BD899A , BD900 , BD900A .

History: BD187 | 2N1631 | 2N5781 | 2SC1276 | LM1090G | 2T7236A | PBLS4005D

Keywords - BD896A transistor datasheet

 BD896A cross reference
 BD896A equivalent finder
 BD896A lookup
 BD896A substitution
 BD896A replacement

 

 
Back to Top

 


 
.