BD897A. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BD897A datasheet

..1. Size:120K inchange semiconductor
bd895a bd897a bd899a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895A/897A/899A DESCRIPTION With TO-220C package Complement to type BD896A/898A/900A DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em

..2. Size:212K inchange semiconductor
bd897a.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor BD897A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 4A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD898A Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

9.1. Size:120K jmnic
bd897.pdf pdf_icon

Power Transistors www.jmnic.com BD897 Silicon PNP Transistors Features B C E With TO-220 package With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 60 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5.0 V IB Base collector current IC Collector current 8.0 A

9.2. Size:211K inchange semiconductor
bd897.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor BD897 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD898 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL