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BD897A Specs and Replacement

Type Designator: BD897A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

 BD897A Substitution

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BD897A datasheet

 ..1. Size:120K  inchange semiconductor

bd895a bd897a bd899a.pdf pdf_icon

BD897A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895A/897A/899A DESCRIPTION With TO-220C package Complement to type BD896A/898A/900A DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em... See More ⇒

 ..2. Size:212K  inchange semiconductor

bd897a.pdf pdf_icon

BD897A

isc Silicon NPN Darlington Power Transistor BD897A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 4A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD898A Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... See More ⇒

 9.1. Size:120K  jmnic

bd897.pdf pdf_icon

BD897A

Power Transistors www.jmnic.com BD897 Silicon PNP Transistors Features B C E With TO-220 package With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 60 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5.0 V IB Base collector current IC Collector current 8.0 A... See More ⇒

 9.2. Size:211K  inchange semiconductor

bd897.pdf pdf_icon

BD897A

isc Silicon NPN Darlington Power Transistor BD897 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD898 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... See More ⇒

Detailed specifications: BD878, BD879, BD880, BD895, BD895A, BD896, BD896A, BD897, 2SC4793, BD898, BD898A, BD899, BD899A, BD900, BD900A, BD901, BD902

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