BD899A Todos los transistores

 

BD899A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD899A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO220

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BD899A datasheet

 ..1. Size:120K  inchange semiconductor
bd895a bd897a bd899a.pdf pdf_icon

BD899A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895A/897A/899A DESCRIPTION With TO-220C package Complement to type BD896A/898A/900A DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em

 ..2. Size:212K  inchange semiconductor
bd899a.pdf pdf_icon

BD899A

isc Silicon NPN Darlington Power Transistor BD899A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 4A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD900A Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

 9.1. Size:121K  inchange semiconductor
bd895 bd897 bd899 bd901.pdf pdf_icon

BD899A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895/897/899/901 DESCRIPTION With TO-220C package Complement to type BD896/898/900/902 DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3

 9.2. Size:212K  inchange semiconductor
bd899.pdf pdf_icon

BD899A

isc Silicon NPN Darlington Power Transistor BD899 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD900 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL

Otros transistores... BD895A , BD896 , BD896A , BD897 , BD897A , BD898 , BD898A , BD899 , A940 , BD900 , BD900A , BD901 , BD902 , BD905 , BD906 , BD907 , BD908 .

 

 

 


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