BD899A . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BD899A Datasheet (PDF)

..1. Size:120K inchange semiconductor
bd895a bd897a bd899a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895A/897A/899A DESCRIPTION With TO-220C package Complement to type BD896A/898A/900A DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

..2. Size:212K inchange semiconductor
bd899a.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor BD899ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD900AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

9.1. Size:121K inchange semiconductor
bd895 bd897 bd899 bd901.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895/897/899/901 DESCRIPTION With TO-220C package Complement to type BD896/898/900/902 DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

9.2. Size:212K inchange semiconductor
bd899.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor BD899DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD900Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPL

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .