BD899A pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BD899A Specs and Replacement

Type Designator: BD899A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

BD899A Substitution

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BD899A datasheet

..1. Size:120K inchange semiconductor

bd895a bd897a bd899a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895A/897A/899A DESCRIPTION With TO-220C package Complement to type BD896A/898A/900A DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em... See More ⇒

..2. Size:212K inchange semiconductor

bd899a.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor BD899A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 4A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD900A Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... See More ⇒

9.1. Size:121K inchange semiconductor

bd895 bd897 bd899 bd901.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895/897/899/901 DESCRIPTION With TO-220C package Complement to type BD896/898/900/902 DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 ... See More ⇒

9.2. Size:212K inchange semiconductor

bd899.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor BD899 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD900 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... See More ⇒

Detailed specifications: BD895A, BD896, BD896A, BD897, BD897A, BD898, BD898A, BD899, A940, BD900, BD900A, BD901, BD902, BD905, BD906, BD907, BD908