BD900A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD900A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar BD900A
BD900A
Datasheet (PDF)
..1. Size:120K inchange semiconductor
bd896a bd898a bd900a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em
..2. Size:212K inchange semiconductor
bd900a.pdf
isc Silicon PNP Darlington Power Transistor BD900ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD899AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation
9.1. Size:121K inchange semiconductor
bd896 bd898 bd900 bd902.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896/898/900/902 DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3
9.2. Size:212K inchange semiconductor
bd900.pdf
isc Silicon PNP Darlington Power Transistor BD900DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD899Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.