BD900A Todos los transistores

 

BD900A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD900A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO220
 

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BD900A Datasheet (PDF)

 ..1. Size:120K  inchange semiconductor
 bd896a bd898a bd900a.pdf pdf_icon

BD900A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

 ..2. Size:212K  inchange semiconductor
 bd900a.pdf pdf_icon

BD900A

isc Silicon PNP Darlington Power Transistor BD900ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD899AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation

 9.1. Size:121K  inchange semiconductor
 bd896 bd898 bd900 bd902.pdf pdf_icon

BD900A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896/898/900/902 DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

 9.2. Size:212K  inchange semiconductor
 bd900.pdf pdf_icon

BD900A

isc Silicon PNP Darlington Power Transistor BD900DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD899Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

MOSTRAR MÁS

Otros transistores... BD896A , BD897 , BD897A , BD898 , BD898A , BD899 , BD899A , BD900 , BC546 , BD901 , BD902 , BD905 , BD906 , BD907 , BD908 , BD909 , BD910 .

 

 
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