BD900A - аналоги, параметры транзистора - Справочник транзисторов

BD900A даташит

..1. Size:120K inchange semiconductor
bd896a bd898a bd900a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em

..2. Size:212K inchange semiconductor
bd900a.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor BD900A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -4A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD899A Minimum Lot-to-Lot variations for robust device performance and reliable operation

9.1. Size:121K inchange semiconductor
bd896 bd898 bd900 bd902.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896/898/900/902 DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3

9.2. Size:212K inchange semiconductor
bd900.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor BD900 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD899 Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

Другие транзисторы: BD896A, BD897, BD897A, BD898, BD898A, BD899, BD899A, BD900, 2SA1837, BD901, BD902, BD905, BD906, BD907, BD908, BD909, BD910