BD935F Todos los transistores

 

BD935F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD935F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO220F

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BD935F datasheet

 ..1. Size:213K  inchange semiconductor
 bd933f bd935f bd937f bd939f bd941f.pdf pdf_icon

BD935F

isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD934F/936F/938F/940F/942F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLU

 9.1. Size:331K  philips
 bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

BD935F

 9.2. Size:211K  inchange semiconductor
 bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

BD935F

isc Silicon NPN Power Transistor BD933/935/937/939/941 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD934/936/938/940/942 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM

Otros transistores... BD910 , BD911 , BD912 , BD933 , BD933F , BD934 , BD934F , BD935 , 2SC945 , BD936 , BD936F , BD937 , BD937F , BD938 , BD938F , BD939 , BD939F .

 

 

 

 

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