All Transistors. BD935F Datasheet

 

BD935F Datasheet and Replacement


   Type Designator: BD935F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220F
 

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BD935F Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
 bd933f bd935f bd937f bd939f bd941f.pdf pdf_icon

BD935F

isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934F/936F/938F/940F/942FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLU

 9.1. Size:331K  philips
 bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

BD935F

 9.2. Size:211K  inchange semiconductor
 bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

BD935F

isc Silicon NPN Power Transistor BD933/935/937/939/941DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934/936/938/940/942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLUTE MAXIMUM

Datasheet: BD910 , BD911 , BD912 , BD933 , BD933F , BD934 , BD934F , BD935 , 2SC2655 , BD936 , BD936F , BD937 , BD937F , BD938 , BD938F , BD939 , BD939F .

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