BD940 Todos los transistores

 

BD940 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD940
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220

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BD940 Datasheet (PDF)

 ..1. Size:224K  inchange semiconductor
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BD940
BD940

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD934/936/938/940/942DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -150mAFE CComplement to Type BD933/935/937/939/941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can

 0.1. Size:214K  inchange semiconductor
bd934f bd936f bd938f bd940f bd942f.pdf

BD940
BD940

isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -150mAFE CComplement to Type BD933F/935F/937F/939F/941FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOL

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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