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BD940F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD940F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220F

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BD940F Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
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BD940F
BD940F

isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -150mAFE CComplement to Type BD933F/935F/937F/939F/941FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOL

 9.1. Size:224K  inchange semiconductor
bd934 bd936 bd938 bd940 bd942.pdf

BD940F
BD940F

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD934/936/938/940/942DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -150mAFE CComplement to Type BD933/935/937/939/941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can

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