All Transistors. BD940F Datasheet

 

BD940F Datasheet and Replacement


   Type Designator: BD940F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220F
 

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BD940F Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
 bd934f bd936f bd938f bd940f bd942f.pdf pdf_icon

BD940F

isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -150mAFE CComplement to Type BD933F/935F/937F/939F/941FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOL

 9.1. Size:224K  inchange semiconductor
 bd934 bd936 bd938 bd940 bd942.pdf pdf_icon

BD940F

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD934/936/938/940/942DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -150mAFE CComplement to Type BD933/935/937/939/941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2N6547T3

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