BD941 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD941
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO220
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BD941 datasheet
bd941.pdf
isc Silicon NPN Power Transistor BD941 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD942 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
bd933 bd935 bd937 bd939 bd941.pdf
isc Silicon NPN Power Transistor BD933/935/937/939/941 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD934/936/938/940/942 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM
bd933f bd935f bd937f bd939f bd941f.pdf
isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD934F/936F/938F/940F/942F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLU
Otros transistores... BD937 , BD937F , BD938 , BD938F , BD939 , BD939F , BD940 , BD940F , NJW0281G , BD941F , BD942 , BD942F , BD943 , BD943F , BD944 , BD944F , BD945 .
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